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| Product Data Sheet December 16, 2002 DC - 10.5 GHz Discrete HFET TGF4250-SCC Key Features and Performance * * * * * * * * * * Nominal Pout of 34 dBm at 8.5 GHz Nominal Gain of 8.5 dB at 8.5 GHz Nominal PAE of 53% at 8.5 GHz Suitable for high reliability applications 4800 m x 0.5 m FET Chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in) Bias at 8 Volts, 384 mA Cellular Base Stations High-reliability space Military Primary Applications Description The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain, and 53% PAE. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4250-SCC is readily assembled using automatic equipment. For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet December 16, 2002 TGF4250-SCC TABLE I MAXIMUM RATINGS SYMBOL VDS VGS PD TCH TSTG TM PARAMETER 1/ Drain to Source Voltage Gate to Source Voltage Range Power Dissipation Operating Channel Temperature Storage Temperature Mounting Temperature (30 seconds) VALUE 12 V 0 to -5.0 Volts See Thermal Data 150C -65 to 200C 320C NOTES 2/, 3/ 1/ These ratings represent the maximum values for this device. Stresses beyond those listed under "Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "DC Probe Characteristics" and "RF Probe Characteristics" is not implied. Exposure to maximum rated conditions for extended periods may affect device reliability. 2/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ These ratings apply to each individual FET TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 2 Product Data Sheet December 16, 2002 TGF4250-SCC TABLE II DC PROBE CHARACTERISTICS (TA = 25 C, Nominal) Symbol IDSS GM VP VBGS VBGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Minimum --1 17 17 Typical 1176 792 1.85 22 22 Maximum --3 30 30 Unit mA mS V V V Note 1/ 1/ 2/ 2/ 2/ 1/ Total for Four FETS 2/ VP, VBGS, and VBGD are negative. T A B L E III E LE C T R IC AL C H AR AC T E R IS TIC S (T A = 25 C , N o m inal) B ias C o n d itio ns: V d = 8V , Id = 200m A + /- 10% S ym b o l P out Gp PAE P aram eter O utput P ow er P ow er G ain P ow er A dded Efficiency T ypical 34 8.5 53 U n it dB m dB % Note: The recommended bias current for HFETs is 80 mA/mm. For this 4.8 mm HFET IQ is 384 mA. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 3 Product Data Sheet December 16, 2002 TGF4250-SCC TYPICAL PERFORMANCE TA=25C TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 4 Product Data Sheet December 16, 2002 TGF4250-SCC TYPICAL PERFORMANCE TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 5 Product Data Sheet December 16, 2002 TGF4250-SCC THERMAL INFORMATION TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 6 Product Data Sheet December 16, 2002 TGF4250-SCC TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 7 Product Data Sheet December 16, 2002 TGF4250-SCC Mechanical Drawing * * ** ** GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 8 Product Data Sheet December 16, 2002 TGF4250-SCC Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Die are shipped in gel pack unless otherwise specified. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 9 |
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